Method for producing semiconductor device, semiconductor package, and method for producing semiconductor package

ABSTRACT

A method for producing a semiconductor device includes dicing, at a scribe area of a semiconductor wafer, the semiconductor wafer into semiconductor chips including respective circuit areas formed on the semiconductor wafer, the scribe area being provided between the circuit areas and extending in a first direction in a plan view, wherein the scribe area includes a first area extending in the first direction and second areas including monitor pads and extending in the first direction and located on both sides of the first area, wherein the method includes removing at least portions of the monitor pads by emitting laser beam to the second areas before the dicing, and wherein, in the dicing, the semiconductor wafer is diced at the first area.

CROSS-REFERENCE TO RELATED APPLICATION

The present application claims priority to Japanese Patent ApplicationNo. 2020-127200, filed on Jul. 28, 2020, which is incorporated herein byreference in its entirety.

FIELD

The present disclosure relates to a method for producing a semiconductordevice, a semiconductor package, and a method for producing thesemiconductor package.

BACKGROUND

When a semiconductor device is produced, multiple circuit areas areprovided on the semiconductor wafer, and a scribe area is providedbetween neighboring circuit areas. Then, at the scribe area, thesemiconductor wafer is diced into multiple semiconductor chips with adicing blade.

The diced semiconductor chips are flip-chip mounted on or over a printedcircuit board, and an underfill is provided between the printed circuitboard and the semiconductor chip.

SUMMARY

According to an aspect of an embodiment of the present disclosure, amethod for producing a semiconductor device, the method includes:

dicing, at a scribe area, a semiconductor wafer into a plurality ofsemiconductor chips each including at least one of a plurality ofcircuit areas, the semiconductor wafer including the plurality ofcircuit areas and the scribe area provided between neighboring circuitareas of the plurality of circuit areas, the scribe area extending in afirst direction in a plan view,

wherein the scribe area includes:

-   -   a first area extending in the first direction; and    -   second areas located on both sides of the first area in a second        direction perpendicular to the first direction in the plan view,        the second areas extending in the first direction, monitor pads        being provided in the second areas,

wherein the method includes:

before the dicing of the semiconductor wafer into the plurality ofsemiconductor chips, removing at least portions of the monitor pads byemitting laser beam to the second areas, and

wherein, in the dicing of the semiconductor wafer into the plurality ofsemiconductor chips, the semiconductor wafer is diced at the first area.

The object and advantages of the invention will be realized and attainedby means of the elements and combinations particularly pointed out inthe claims. It is to be understood that both the foregoing generaldescription and the following detailed description are exemplary andexplanatory and are not restrictive of the invention.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a drawing illustrating a semiconductor wafer used in a firstembodiment;

FIG. 2 is a schematic diagram (Part 1) illustrating a method forproducing a semiconductor device according to the first embodiment;

FIG. 3 is a schematic diagram (Part 2) illustrating the method forproducing a semiconductor device according to the first embodiment;

FIG. 4 is a schematic diagram (Part 3) illustrating the method forproducing a semiconductor device according to the first embodiment;

FIG. 5 is a schematic diagram (Part 4) illustrating the method forproducing a semiconductor device according to the first embodiment;

FIG. 6 is a cross-sectional view (Part 1) illustrating the method forproducing a semiconductor device according to the first embodiment;

FIG. 7 is a cross-sectional view (Part 2) illustrating the method forproducing a semiconductor device according to the first embodiment;

FIG. 8 is a cross-sectional view (Part 3) illustrating the method forproducing a semiconductor device according to the first embodiment;

FIG. 9 is a cross-sectional view (Part 4) illustrating the method forproducing a semiconductor device according to the first embodiment;

FIG. 10 is a drawing illustrating a layout of a diced semiconductordevice according to the first embodiment;

FIGS. 11A and 11B are cross-sectional views illustrating a semiconductorpackage having a semiconductor device;

FIG. 12 is a schematic diagram (Part 1) illustrating a method forproducing a semiconductor device according to a second embodiment;

FIG. 13 is a schematic diagram (Part 2) illustrating the method forproducing a semiconductor device according to the second embodiment;

FIG. 14 is a cross-sectional view (Part 1) illustrating the method forproducing a semiconductor device according to the second embodiment;

FIG. 15 is a cross-sectional view (Part 2) illustrating the method forproducing a semiconductor device according to the second embodiment;

FIG. 16 is a schematic diagram illustrating a method for producing asemiconductor device according to a third embodiment;

FIG. 17 is a cross-sectional view illustrating a method for producing asemiconductor device according to the third embodiment;

FIG. 18 is a cross-sectional view illustrating a method for producing asemiconductor device according to a fourth embodiment;

FIG. 19 is a cross-sectional view illustrating a method for producing asemiconductor device according to a fifth embodiment;

FIG. 20 is a cross-sectional view illustrating a method for producing asemiconductor device according to a sixth embodiment; and

FIG. 21 is a cross-sectional view illustrating a method for producing asemiconductor device according to a seventh embodiment.

DESCRIPTION OF EMBODIMENTS

When a semiconductor device is produced, multiple circuit areas areprovided on the semiconductor wafer, and a scribe area is providedbetween neighboring circuit areas. Then, at the scribe area, thesemiconductor wafer is diced into multiple semiconductor chips with adicing blade.

The diced semiconductor chips are flip-chip mounted on or over a printedcircuit board, and an underfill is provided between the printed circuitboard and the semiconductor chip. See Japanese Laid-open PatentPublication No. 2010-129970, Japanese Laid-open Patent Publication No.2010-267795, Japanese Laid-open Patent Publication No. 2011-035302,Japanese Laid-open Patent Publication No. 2014-223677, and JapaneseLaid-open Patent Publication No. 2016-134427.

With such a semiconductor device manufactured using a conventionalsemiconductor chip, peeling may occur between the semiconductor chip andthe underfill.

Accordingly, it is desired to provide a method for producing asemiconductor device, a semiconductor package, and a method forproducing a semiconductor package that can reduce peeling of theunderfill.

Hereinafter, embodiments are specifically described with reference tothe attached drawings. In the specification and the drawings of thepresent application, constituent elements having substantially the samefunctional configurations may be denoted by the same reference numerals,and redundant explanations thereabout may be omitted. In the followingexplanation, the two directions that are parallel to the surface of thesubstrate and that are orthogonal to each other are referred to as the Xdirection and the Y direction, and the direction perpendicular to thesurface of the substrate is referred to as the Z direction. Also, adrawing illustrating a surface extending in the X and Y directions asseen from the Z direction may be referred to as a plan view.

First Embodiment

First, the first embodiment is explained. The first embodiment relatesto a method for producing a semiconductor device. FIG. 1 is a drawingillustrating a semiconductor wafer used in the first embodiment. FIG. 2to FIG. 5 are schematic diagrams illustrating the method for producing asemiconductor device according to the first embodiment. FIG. 6 to FIG. 9are cross-sectional views illustrating the method for producing asemiconductor device according to the first embodiment. FIG. 2 to FIG. 5are enlarged drawings illustrating an area 2 that is a portion of FIG. 1. FIG. 6 to FIG. 9 are cross-sectional views taken along line VI-VI toline IX-IX in FIG. 2 to FIG. 5 , respectively.

In the method for producing a semiconductor device according to thefirst embodiment, a semiconductor wafer including multiple circuit areasand a scribe area having monitor pads is prepared, and the semiconductorwafer is diced at the scribe area, so that multiple semiconductor chipsincluding respective circuit areas are formed.

First, the semiconductor wafer is explained in detail. As illustrated inFIG. 1 and FIG. 2 , the semiconductor wafer 1 used in the firstembodiment includes multiple circuit areas 3 arranged in the X directionand the Y direction. A scribe area 4Y extending in the Y direction isprovided between circuit areas 3 neighboring with each other in the Xdirection, and a scribe area 4X extending in the X direction is providedbetween circuit areas 3 neighboring with each other in the Y direction.A seal ring 6 is provided between the circuit areas 3 and the scribeareas 4X and 4Y.

Monitor patterns (not illustrated) are provided in the scribe areas 4Xand 4Y, and the monitor pads 5 connected to the monitor patterns areprovided on the front surface of the scribe areas 4X and 4Y. Forexample, when the X direction is referred to as a row direction, and theY direction is referred to as a column direction, in the scribe area 4X,multiple monitor pads 5 are arranged so as to constitute a matrixincluding 5 rows and N columns (N is a natural number), and in thescribe area 4Y, multiple monitor pads 5 are arranged so as to constitutea matrix including M rows (M is a natural number) and 3 columns.

Hereinafter, the configuration of the scribe area 4X is explained. Asillustrated in FIG. 6 , a first interlayer insulating film 111 is formedon a substrate 101 such as a silicon substrate. Vias 121 are formed inthe first interlayer insulating film 111. For example, the firstinterlayer insulating film 111 is a film such as silicon carbide acid(SiOC), silicon oxynitride (SiON), or silicon oxide (SiO₂). For example,the via 121 is a film such as tungsten (W), ruthenium (Ru), molybdenum(Mo) or cobalt (Co), and an underlayer film such as titanium (Ti) ortitanium nitride (TiN) formed under this film.

Second interlayer insulating films 112 are formed on the firstinterlayer insulating film 111. A conductive trace film 132 is formed inthe second interlayer insulating film 112. For example, the secondinterlayer insulating film 112 is a film such as silicon carbide acid(SiOC), silicon oxynitride (SiON), or silicon oxide (SiO₂). For example,the conductive trace film 132 includes a film such as copper (Cu) orruthenium (Ru) and an underlayer film such as titanium (Ti), titaniumnitride (TiN), tantalum (Ta), or tantalum nitride (TaN) formed underthis film. In a case where the material of the conductive trace film 132is ruthenium (Ru), the formation of the underlayer film may be omitted.

Multiple third interlayer insulating films 113 are formed on the secondinterlayer insulating film 112. Vias 123 and a conductive trace film 133are formed in the third interlayer insulating film 113. The conductivetrace film 133 is formed on the vias 123, and the conductive trace film133 and the vias 123 have a dual damascene structure. The vias 123 areconnected to the conductive trace film 132 immediately under the vias123 or to the conductive trace film 133. For example, the thirdinterlayer insulating film 113 is a film such as silicon carbide acid(SiOC), silicon oxynitride (SiON), or silicon oxide (SiO₂). For example,the conductive trace film 133 and the vias 123 are a film such as copper(Cu) or ruthenium (Ru) and an underlayer film such as titanium (Ti),titanium nitride (TiN), tantalum (Ta), or tantalum nitride (TaN) formedunder this film. In a case where the conductive trace film 133 is madeof ruthenium (Ru), it is not necessary to form the underlayer film.

A fourth interlayer insulating film 114 is formed on the uppermost thirdinterlayer insulating film 113 of the multiple third interlayerinsulating films 113. A conductive film 134 is formed on the fourthinterlayer insulating film 114. Via holes 144 are formed in the fourthinterlayer insulating film 114, and the conductive film 134 is connectedto the conductive trace film 133 through the via holes 144. A cover film116 is formed on the fourth interlayer insulating film 114 and theconductive film 134. In the cover film 116, an opening portion 146 isformed to expose a portion of the conductive film 134. The openingportion 146 has a rectangular planar shape including two sides parallelto the X direction and two sides parallel to the Y direction. Forexample, the fourth interlayer insulating film 114 is a film such as asilicon oxide (SiO₂). For example, the conductive film 134 is a filmsuch as aluminum (Al).

Although not illustrated in FIG. 6 , the monitor patterns are providedin the scribe area 4X, and the conductive film 134 is connected to themonitor patterns. A portion of the conductive film 134 that is exposedfrom the opening portion 146 serves as one of the monitor pads 5, and anelectrical characteristics test using the monitor patterns is conductedthrough the monitor pads 5.

In the scribe area 4X, five opening portions 146 are arranged in the Ydirection, and five monitor pads 5 are also arranged in the Y direction.In the scribe area 4X, a group of monitor pads 5 in five rows arearranged in the Y direction. The scribe area 4X includes: two grooveformation areas 10 that overlap with the outermost rows of the group offive rows; and one dicing area 20 that overlaps with the central row ofthe group of five rows. The groove formation areas 10 and the dicingarea 20 extend in the X direction. The width of the groove formationarea 10 is generally equal to the spot diameter of laser beam emittedlater. The width of the dicing area 20 is generally equal to thethickness of the dicing blade. The width of the groove formation area 10and the spot diameter of the laser beam may be different from eachother, and the width of the dicing area 20 and the thickness of thedicing blade may be different from each other.

The scribe area 4Y has a configuration similar to the scribe area 4Xexcept that the directions of the constituent elements such as thegroove formation area 10, the dicing area 20, and the like and thearrangement of the monitor pads 5 are different. In the scribe area 4Y,three opening portions 146 are arranged in the X direction, and threemonitor pads 5 are also arranged in the X direction. In the scribe area4Y, a group of three columns of monitor pads 5 are arranged in the Xdirection. The scribe area 4Y includes: two groove formation areas 10that overlap with the outermost columns of the group of three columns;and one dicing area 20 that overlaps with the central column of thegroup of three columns. The groove formation areas 10 and the dicingarea 20 extend in the Y direction. The width of the groove formationarea 10 is generally equal to the spot diameter of laser beam emittedlater. The width of the dicing area 20 is generally equal to thethickness of the dicing blade. The width of the groove formation area 10and the spot diameter of the laser beam may be different from eachother, and the width of the dicing area 20 and the thickness of thedicing blade may be different from each other.

The semiconductor wafer 1 has the configuration as explained above.

With the semiconductor wafer 1 thus prepared, the electricalcharacteristics test using the monitor patterns is performed through themonitor pads 5.

After the electrical characteristics test, as illustrated in FIG. 3 andFIG. 7 , the monitor pads 5 (the conductive film 134) in the grooveformation areas 10 are removed by emitting laser beam onto the grooveformation areas 10. In the emission of the laser beam, further, on thelower side of the monitor pads 5, the conductive trace films 133, thevias 123, the third interlayer insulating films 113, the conductivetrace film 132, the vias 121, the second interlayer insulating film 112,and the first interlayer insulating film 111 are removed. As a result,grooves 31 reaching the substrate 101 are formed. The front surface ofthe substrate 101 is exposed through the grooves 31.

Next, as illustrated in FIG. 4 and FIG. 8 , the monitor pads 5 (theconductive film 134), the conductive trace films 133, the vias 123, thethird interlayer insulating films 113, the conductive trace film 132,the vias 121, the second interlayer insulating film 112, and the firstinterlayer insulating film 111 in the dicing area 20 are removed byemitting laser beam to the dicing area 20. As a result, the grooves 32reaching the substrate 101 are formed in the dicing area 20. The frontsurface of the substrate 101 is exposed through the groove 32. Thegrooves 32 may be formed after the grooves 31 are formed. Alternatively,the grooves 31 may be formed after the grooves 32 are formed. Stillalternatively, the grooves 31 and the grooves 32 may be formed in thesame step.

Thereafter, as illustrated in FIG. 5 and FIG. 9 , the substrate 101exposed through the grooves 32 is diced with a dicing blade and thelike. The semiconductor wafer 1 is diced at the dicing areas 20 in thescribe areas 4X and 4Y by emitting laser beam to the dicing areas 20 anddicing the substrate 101 with the dicing blade and the like, andmultiple semiconductor chips (i.e., a semiconductor device 100)including respective circuit areas 3 are formed. In other words, thesemiconductor wafer 1 is diced into multiple semiconductor chips (thesemiconductor device 100).

When the semiconductor wafer 1 is diced, a dicing blade having almostthe same thickness as the width of the dicing area 20 is used, and thedicing area 20 is diced with the dicing blade. As a result, the dicingarea 20 is eliminated, and multiple semiconductor chips are obtained asa semiconductor device 100.

Hereinafter, the diced semiconductor device 100 and a semiconductorpackage including the semiconductor device 100 are explained. FIG. 10 isa drawing illustrating a layout of a diced semiconductor deviceaccording to the first embodiment. FIGS. 11A and 11B are cross-sectionalviews illustrating the semiconductor package including the semiconductordevice. FIG. 11A illustrates the entire semiconductor package. FIG. 11Bis an enlarged view of an area 61 that is a portion of FIG. 11A.

As illustrated in FIG. 10 , the semiconductor device 100 includes acircuit area 3, the scribe areas 4X, and the scribe areas 4Y. Thesemiconductor device 100 has an outer peripheral surface 100A, and inthe plan view, the scribe areas 4X and the scribe areas 4Y are locatedbetween the circuit area 3 and the outer peripheral surface 100A. Eachof the scribe areas 4X and the scribe areas 4Y includes the grooveformation area 10, and the grooves 31 are formed in the groove formationarea 10. As illustrated in FIG. 9 , in the groove 31, for example, thevias 121, the conductive trace film 132, the vias 123, the conductivetrace films 133, and the conductive film 134 are exposed. In otherwords, portions of the conductive traces included in the conductivetrace layers and portions of the monitor pads 5 are exposed through thegrooves 31.

As illustrated in FIGS. 11A and 11B, a wiring substrate 62 provided withexternal terminals 63 is provided on the lower surface of asemiconductor package 60, and the semiconductor device 100 is flip-chipmounted on or over the wiring substrate 62 with a conductive material 64such as a solder. An underfill 65 is filled as an insulating filmbetween the wiring substrate 62 and the semiconductor device 100. Theunderfill 65 is also provided in the grooves 31. The underfill 65 maycover outer peripheral surfaces 100A of the semiconductor device 100.

In the semiconductor package 60, the adhesion property between theunderfill 65 and the substrate 101 is higher than the adhesion propertybetween the adhesion property between the underfill 65 and the monitorpad 5. Therefore, the peeling is less likely to occur between thesemiconductor device 100 and the underfill 65 than in a case where theentire monitor pads 5 are remaining in the groove formation area 10.

Also, when the substrate 101 is diced (see FIG. 5 and FIG. 9 ), a crackmay occur in the conductive film 134, the conductive trace films 133,the vias 123, the third interlayer insulating films 113, the conductivetrace film 132, or the vias 121, but even if the crack occurs, theextension of the crack can be stopped at the grooves 31. Therefore, thecircuit area 3 can be protected from cracks.

The width of the dicing area 20 does not have to be the same as thethickness of the dicing blade. Also, it is not necessary to eliminatethe entire dicing area 20, and after the substrate 101 is diced with thedicing blade, portions of the dicing area 20 may be remaining. In thiscase, portions of the monitor pads 5 (the conductive film 134) in thedicing area 20 may be remaining.

The vias 123 may have a single damascene structure. In this case, thevia 123 includes a film such as tungsten (W), ruthenium (Ru), molybdenum(Mo), or cobalt (Co) and an underlayer film such as titanium (Ti) ortitanium nitride (TiN) formed under this film.

Second Embodiment

Subsequently, the second embodiment is explained. The second embodimentis different from the first embodiment mainly in the processing of thescribe area 4X. FIG. 12 to FIG. 13 are schematic diagrams illustrating amethod for producing a semiconductor device according to the secondembodiment. FIG. 14 to FIG. 15 are cross-sectional views illustratingthe method for producing a semiconductor device according to the secondembodiment. FIG. 12 to FIG. 13 are enlarged drawings illustrating anarea 2 that is a portion of FIG. 1 . FIG. 14 to FIG. 15 correspond tocross-sectional views taken along line XIV-XIV to line XV-XV of FIG. 12to FIG. 13 , respectively.

In the second embodiment, first, similarly to the first embodiment, thesemiconductor wafer 1 is prepared (FIG. 2 and FIG. 6 ), and anelectrical characteristics test is performed. Subsequently, asillustrated in FIG. 12 and FIG. 14 , the monitor pads 5 (the conductivefilm 134) in dicing areas 10 are removed by emitting laser beam onto thedicing areas 10. Further, the monitor pads 5 (the conductive film 134)in second groove formation areas 30 are removed by emitting laser beamonto the second groove formation areas 30 between the dicing area 10 andfirst groove formation areas 20. In the scribe area 4X, the secondgroove formation areas 30 overlap with the outermost rows and thecentral row of the group of five rows of monitor pads 5, and the secondgroove formation areas 30 extend in the X direction. The width of thesecond groove formation area 30 is generally equal to the spot diameterof laser beam emitted later. In the emission of the laser beam, further,on the lower side of the monitor pads 5, the conductive trace films 133,the vias 123, the third interlayer insulating films 113, the conductivetrace film 132, the vias 121, the second interlayer insulating film 112,and the first interlayer insulating film 111 are removed. As a result,in the first groove formation areas 20, grooves 31 reaching thesubstrate 101 are formed, and in the second groove formation areas 30,grooves 33 reaching the substrate 101 are formed. The front surface ofthe substrate 101 is exposed through the grooves 31 and 33. The width ofthe second groove formation area 30 and the spot diameter of the laserbeam may be different from each other. The order in which the grooves31, 32, and 33 are formed is not limited, and the grooves 31, 32, and 33may be formed in any order.

Thereafter, as illustrated in FIG. 13 and FIG. 15 , similarly to thefirst embodiment, the monitor pads (the conductive film 134) in thedicing areas 10 are removed by emitting laser beam onto the dicing areas10, and the substrate 101 exposed through the grooves 32 is diced with adicing blade and the like. The semiconductor wafer 1 is diced at thedicing areas 10 in the scribe areas 4X and 4Y by emitting laser beam tothe dicing areas 10 and dicing the substrate 101 with the dicing bladeand the like, and a semiconductor device 200 (i.e., multiplesemiconductor chips) including respective circuit areas 3 is formed. Inother words, the semiconductor wafer 1 is diced into multiplesemiconductor chips (i.e., the semiconductor device 200).

In a case where a semiconductor package 60 is produced by using thesemiconductor device 200, the underfill 65 is provided not only in thegrooves 31 but also in the grooves 33.

According to the second embodiment, the contact area between theunderfill 65 and the monitor pads 5 is reduced more greatly, andaccordingly, a higher adhesion property between the semiconductor device200 and the underfill 65 is obtained, and the peeling between thesemiconductor device 200 and the underfill 65 can be alleviated morereliably.

Third Embodiment

Subsequently, the third embodiment is explained. The third embodiment isdifferent from the first embodiment and the like mainly in theprocessing of the scribe areas 4X and 4Y. FIG. 16 is a schematic diagramillustrating a method for producing a semiconductor device according tothe third embodiment. FIG. 17 is a cross-sectional view illustrating amethod for producing a semiconductor device according to the thirdembodiment. FIG. 16 is an enlarged drawing illustrating an area 2 thatis a portion of FIG. 1 . FIG. 17 corresponds to a cross-sectional viewtaken along line XVI to line XVI of FIG. 16 .

In the third embodiment, first, similarly to the first embodiment, thesemiconductor wafer 1 is prepared (FIG. 2 and FIG. 6 ), and electricalcharacteristics test is performed. Subsequently, as illustrated in FIG.16 and FIG. 17 , the monitor pads 5 (the conductive film 134), theconductive trace films 133, the vias 123, the third interlayerinsulating films 113, the conductive trace film 132, the vias 121, thesecond interlayer insulating film 112, and the first interlayerinsulating film 111 are removed in the groove formation areas 10, thedicing area 20, and areas between the groove formation areas 10 and thedicing area 20 by emitting laser beam onto these areas. In these areas,the front surface of the substrate 101 is exposed.

Thereafter, similarly to the first embodiment, the substrate 101 isdiced in the dicing areas 20 with the dicing blade and the like. Thesemiconductor wafer 1 is diced at the dicing areas 20 in the scribeareas 4X and 4Y by emitting laser beam to the dicing area 20 and dicingthe substrate 101 with the dicing blade and the like, and asemiconductor device 300 (i.e., multiple semiconductor chips) includingrespective circuit areas 3 are formed. In other words, the semiconductorwafer 1 is diced into multiple semiconductor chips (i.e., thesemiconductor device 300).

In a case where the semiconductor package 60 is produced by using thesemiconductor device 300, the underfill 65 is provided so as to be incontact with the entire exposed front surface of the substrate 101.

According to the third embodiment, the contact area between theunderfill 65 and the monitor pads 5 is reduced more greatly, andaccordingly, a higher adhesion property between the semiconductor device300 and the underfill 65 is obtained, and the peeling between thesemiconductor device 300 and the underfill 65 can be alleviated morereliably.

Fourth Embodiment

Subsequently, the fourth embodiment is explained. The fourth embodimentis different from the first embodiment and the like mainly in theprocessing of the scribe area 4X. FIG. 18 is a cross-sectional viewillustrating a method for producing a semiconductor device according tothe fourth embodiment.

In the fourth embodiment, as illustrated in FIG. 18 , when laser beam isemitted onto the groove formation areas 10, the entire monitor pads 5overlapping with the groove formation areas 10 are removed. The entiremonitor pads 5 can be removed by, for example, adjusting the emissionposition of laser beam and adjusting the beam diameter. Theconfiguration other than the above is similar to the first embodiment.According to the fourth embodiment, multiple semiconductor chips (i.e.,a semiconductor device 400) are obtained.

According to the fourth embodiment, the contact area between theunderfill 65 and the monitor pads 5 is reduced more greatly, andaccordingly, a higher adhesion property between the semiconductor device400 and the underfill 65 is obtained, and the peeling between thesemiconductor device 400 and the underfill 65 can be alleviated morereliably.

The entirety of the conductive trace films 133, the vias 123, theconductive trace film 132, and the vias 121 under the monitor pads 5,the entirety of which has been removed, may be removed.

Fifth Embodiment

Subsequently, the fifth embodiment is explained. The fifth embodiment isdifferent from the first embodiment and the like mainly in theprocessing of the scribe areas 4X and 4Y. FIG. 19 is a cross-sectionalview illustrating a method for producing a semiconductor deviceaccording to the fifth embodiment.

In the fifth embodiment, when the grooves 31 are formed, laser beam isemitted with energy greater than the first embodiment. Accordingly, asillustrated in FIG. 19 , the grooves 31 extend into the substrate 101.The configuration other than the above is similar to the firstembodiment. According to the fifth embodiment, multiple semiconductorchips (i.e., a semiconductor device 500) are obtained.

According to the fifth embodiment, effects similar to the firstembodiment can also be obtained.

Sixth Embodiment

Subsequently, the sixth embodiment is explained. The sixth embodiment isdifferent from the second embodiment and the like mainly in theprocessing of the scribe areas 4X and 4Y. FIG. 20 is a cross-sectionalview illustrating a method for producing a semiconductor deviceaccording to the sixth embodiment.

In the sixth embodiment, when grooves 31 are formed, laser beam isemitted with energy greater than the first embodiment. Also, when thegrooves 33 are formed, laser beam is emitted with energy greater thanthe second embodiment. For example, when the grooves 31 are formed,laser beam may be emitted with energy greater than the energy used toform the grooves 33. Accordingly, as illustrated in FIG. 20 , thegrooves 31 and 33 extend into the substrate 101. The grooves 31 extendinto the substrate 101 more deeply than the grooves 33. Theconfiguration other than the above is similar to the second embodiment.According to the sixth embodiment, multiple semiconductor chips (i.e., asemiconductor device 600) are obtained.

According to the sixth embodiment, effects similar to the secondembodiment can also be obtained.

Seventh Embodiment

Subsequently, the seventh embodiment is explained. The seventhembodiment is different from the third embodiment and the like mainly inthe processing of the scribe areas 4X and 4Y. FIG. 21 is across-sectional view illustrating a method for producing a semiconductordevice according to the seventh embodiment.

In the seventh embodiment, the monitor pads 5 (the conductive film 134),the conductive trace films 133, the vias 123, the third interlayerinsulating films 113, the conductive trace film 132, the vias 121, thesecond interlayer insulating film 112, and the first interlayerinsulating film 111 are removed in the groove formation areas 10, thedicing area 20, and areas between the groove formation areas 10 and thedicing area 20 by emitting laser beam onto these areas with energygreater than the third embodiment. Accordingly, as illustrated in FIG.21 , the front surface of the substrate 101 is engraved more deeply thanthe front surface covered with the first interlayer insulating film 111and the like. In the present embodiment, the energy is configured to berelatively greater in the groove formation area 10 in particular. As aresult, grooves 34 are formed in the exposed front surface of thesubstrate 101. The configuration other than the above is similar to thethird embodiment. According to the seventh embodiment, multiplesemiconductor chips (i.e., a semiconductor device 700) are obtained.

According to the seventh embodiment, effects similar to the thirdembodiment can also be obtained.

In any of the above embodiments, the number of monitor pads provided inthe scribe areas 4X and 4Y is not particularly limited.

According to the present disclosure, the peeling of the underfill can bealleviated.

Although the present invention has been described above with referenceto the embodiments, the present invention is not limited to the featuresdescribed in the embodiments. These features can be changed withoutdeparting from the scope of the claimed subject matter, and can beappropriately determined according to the implementation to which thepresent invention is applied.

All examples and conditional language provided herein are intended forthe pedagogical purposes of aiding the reader in understanding theinvention and the concepts contributed by the inventor to further theart, and are not to be construed as limitations to such specificallyrecited examples and conditions, nor does the organization of suchexamples in the specification relate to a showing of the superiority andinferiority of the invention. Although one or more embodiments of thepresent invention have been described in detail, it should be understoodthat the various changes, substitutions, and alterations could be madehereto without departing from the spirit and scope of the invention.

What is claimed is:
 1. A method for producing a semiconductor device,the method comprising: dicing, at a scribe area, a semiconductor waferinto a plurality of semiconductor chips each including at least one of aplurality of circuit areas, the semiconductor wafer including theplurality of circuit areas and the scribe area provided betweenneighboring circuit areas of the plurality of circuit areas, the scribearea extending in a first direction in a plan view, wherein the scribearea includes: a first area extending in the first direction; and secondareas located on both sides of the first area in a second directionperpendicular to the first direction in the plan view, the second areasextending in the first direction, monitor pads being provided in thesecond areas, wherein the method comprises: before the dicing of thesemiconductor wafer into the plurality of semiconductor chips, removingat least portions of the monitor pads by emitting laser beam along thefirst direction at the second areas, and wherein, in the dicing of thesemiconductor wafer into the plurality of semiconductor chips, thesemiconductor wafer is diced along the first direction at the firstarea.
 2. The method for producing the semiconductor device according toclaim 1, wherein in the scribe area, the semiconductor wafer includesmonitor patterns.
 3. The method for producing the semiconductor deviceaccording to claim 1, wherein in the scribe area, the semiconductorwafer includes: a substrate; and a conductive trace layer providedbetween the substrate and the monitor pads, wherein the removing of theat least portions of the monitor pads further comprises forming, in themonitor pads and the conductive trace layer, grooves reaching thesubstrate.
 4. The method for producing the semiconductor deviceaccording to claim 3, wherein the grooves are formed to extend into thesubstrate.
 5. The method for producing the semiconductor deviceaccording to claim 1, wherein the semiconductor chip includes at leastone of the second areas.
 6. A method for producing a semiconductorpackage comprising: producing a semiconductor device by a method forproducing a semiconductor device, the method for producing asemiconductor device comprising: dicing, at a scribe area, asemiconductor wafer into a plurality of semiconductor chips eachincluding at least one of a plurality of circuit areas, thesemiconductor wafer including the plurality of circuit areas and thescribe area provided between neighboring circuit areas of the pluralityof circuit areas, the scribe area extending in a first direction in aplan view, wherein the scribe area includes: a first area extending inthe first direction; and second areas located on both sides of the firstarea in a second direction perpendicular to the first direction in theplan view, the second areas extending in the first direction, monitorpads being provided in the second areas, wherein the method forproducing the semiconductor device comprises: before the dicing of thesemiconductor wafer into the plurality of semiconductor chips, removingat least portions of the monitor pads by emitting laser beam to thesecond areas, and wherein, in the dicing of the semiconductor wafer intothe plurality of semiconductor chips, the semiconductor wafer is dicedat the first area; wherein the method for producing the semiconductorpackage comprises: flip-chip mounting the semiconductor device on orover a wiring substrate; and filling, with an underfill, a space betweenthe semiconductor device and the wiring substrate.
 7. A semiconductorpackage comprising: a wiring substrate; and a semiconductor device thatis produced by a method for producing a semiconductor device, the methodfor producing a semiconductor device comprising: dicing, at a scribearea, a semiconductor wafer into a plurality of semiconductor chips eachincluding at least one of a plurality of circuit areas, thesemiconductor wafer including the plurality of circuit areas and thescribe area provided between neighboring circuit areas of the pluralityof circuit areas, the scribe area extending in a first direction in aplan view, wherein the scribe area includes: a first area extending inthe first direction; and second areas located on both sides of the firstarea in a second direction perpendicular to the first direction in theplan view, the second areas extending in the first direction, monitorpads being provided in the second areas, wherein the method forproducing the semiconductor device comprises: before the dicing of thesemiconductor wafer into the plurality of semiconductor chips, removingat least portions of the monitor pads by emitting laser beam to thesecond areas, and wherein, in the dicing of the semiconductor wafer intothe plurality of semiconductor chips, the semiconductor wafer is dicedat the first area; and wherein the semiconductor device is flip-chipmounted on or over the wiring substrate, and wherein a space between thesemiconductor device and the wiring substrate is filled with anunderfill.